Microwave Energy Drives “On–Off–On” Spin‐Switch Behavior in Nitrogen‐Doped Graphene
Autor*in
Giorgio Zoppellaro
Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, Šlechtitelů 27, 783 71 Olomouc, Czech Republic
Autor*in
Aristides Bakandritsos
Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, Šlechtitelů 27, 783 71 Olomouc, Czech Republic
Autor*in
Jiří Tuček
Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, Šlechtitelů 27, 783 71 Olomouc, Czech Republic
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Abstract
The established application of graphene in organic/inorganic spin-valve spintronic assemblies is as a spin transport channel for spin-polarized electrons injected from ferromagnetic substrates. To generate and control spin-injection without such substrates, the graphene backbone must be imprinted with spin-polarized states and itinerant-like spins. Computations suggest that such states should emerge in graphene derivatives incorporating pyridinic nitrogen. We report the synthesis and electronic properties of nitrogen-doped graphene (N content: 9.8%) featuring both localized spin centers and spin-containing sites with itinerant electron properties. This material exhibits spin-switch behavior (on-off-on) controlled by microwave irradiation at X-band frequency. This phenomenon may enable the creation of novel types of switches, filters, and spintronic devices using sp2-only 2D systems.