This study focused on the deposition of indium-doped zinc oxide (IZO) films at high growth rates by ultrasonic spray pyrolysis. We investigated the influence of processing parameters, such as temperature and solution flow rate, on the structural, optical, and electrical film properties. For all depositions, low-cost and low-toxicity aqueous solutions and metal salt precursors were used. Through the optimization of the spraying parameters and pattern, a spatially homogeneous IZO layer with transparency greater than 80%, resistivity of 3.82 × 10−3 Ω·cm for a thickness of 1800 nm (sheet resistance of 21.2 Ω/sq), Hall carrier density of 1.36 × 1020 cm−3, Hall mobility of 12.01 cm2 V−1 s−1, and work function of 4.4 eV was obtained. These films are suitable for implementation in optoelectronic and photovoltaic devices.